DMBT1015 discrete semiconductors r dc components co., ltd. technical specifications of pnp epitaxial planar transistor description designed for use in driver stage of af amplifier and general purpose amplification. pinning 1 = base 2 = emitter 3 = collector .091(2.30).067(1.70) sot-23 dimensions in inches and (millimeters) .063(1.60).055(1.40) .108(0.65).089(0.25) .045(1.15).034(0.85) .118(3.00) .110(2.80) .020(0.50).012(0.30) .0043(0.11) .0035(0.09) .004 (0.10) .051(1.30).035(0.90) .026(0.65).010(0.25) max .027(0.67).013(0.32) 2 1 3 characteristic symbol rating unit collector-base voltage vcbo -50 v collector-emitter voltage vceo -50 v emitter-base voltage vebo -5 v collector current ic -150 ma total power dissipation pd 225 mw junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) characteristic symbol min typ max unit test conditions collector-base breakdown voltage bvcbo -50 - - v ic=-100ma collector-emitter breakdown voltage bvceo -50 - - v ic=-1ma emitter-base breakdown volatge bvebo -5 - - v ie=-10ma collector cutoff current icbo - - -100 na vcb =-50v emitter cutoff current iebo - - -100 na veb =-5v collector-emitter saturation voltage (1) vce(sat) - - -0.3 v ic=-100ma, ib=-10ma base-emitter saturation voltage (1) vbe(sat) - - -1.1 v ic=-100ma, ib=-10ma dc current gain(1) hfe1 120 - 700 - ic=-2ma, vce=-6v hfe2 25 - - - ic=-150ma, vce=-6v transition frequency ft 80 - - mhz ic=-1ma, vce =-10v, f=100mhz output capacitance cob - - 7 pf vcb =-10v, f=1mhz, ie=0 electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2% rank y g b range 120~240 200~400 350~700 classification of hfe1
|
